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Misfit accommodation and dislocations in heteroepitaxial semiconductor layers: II-VI compounds on GaAs

G. Patriarche, J. P. Rivière, J. Castaing

J. Phys. III France, 3 6 (1993) 1189-1199

DOI: https://doi.org/10.1051/jp3:1993193

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M. Rezki, A. M. Vasson, A. Vasson, R. Planel, and G. Patriarche
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