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Cited article:

Determination of Low-Energy Ion Implantation Damage Parameters by an Ellipsometric Method

U. Müller-Jahreis, P. Thiele, M. Bouafia, A. Seghir

J. Phys. III France, 5 5 (1995) 575-584

DOI: https://doi.org/10.1051/jp3:1995147

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Comparison of oxide leakage currents induced by ion implantation and high field electric stress

D Goguenheim, A Bravaix, C Monserie, et al.
Solid-State Electronics 45 (8) 1355 (2001)
https://doi.org/10.1016/S0038-1101(00)00265-3