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Interaction of gold with dislocations in silicon

B Pichaud, G Mariani-Regula and E.B Yakimov
Materials Science and Engineering: B 71 (1-3) 272 (2000)
DOI: 10.1016/S0921-5107(99)00389-X
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Oxygen precipitate precursors and low temperature gettering processes. II. DLTS analysis of deep levels associated to oxide precipitates

E. Yakimov, D. Feklisova, A. Castaldini, et al.
Materials Science in Semiconductor Processing 2 (1) 69 (1999)
DOI: 10.1016/S1369-8001(99)00006-2
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Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon

O. V. Feklisova, G. Mariani-Regula, B. Pichaud and E. B. Yakimov
physica status solidi (a) 171 (1) 341 (1999)
DOI: 10.1002/(SICI)1521-396X(199901)171:1<341::AID-PSSA341>3.0.CO;2-9
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Chemistry and Physics of Segregation of Impurities at Extended Defects in Silicon

S. Pizzini
physica status solidi (a) 171 (1) 123 (1999)
DOI: 10.1002/(SICI)1521-396X(199901)171:1<123::AID-PSSA123>3.0.CO;2-H
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Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

D.C. Look, C.E. Stutz, R.J. Molnar, K. Saarinen and Z. Liliental-Weber
Solid State Communications 117 (10) 571 (2001)
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A new detection technique of crystalline defects by sheet resistance measurement on multicrystalline silicon wafers

Mohamed Fathi and Djoudi Bouhafs
Semiconductor Science and Technology 21 (4) 437 (2006)
DOI: 10.1088/0268-1242/21/4/005
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Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current

S. Maximenko, S. Soloviev, D. Cherednichenko and T. Sudarshan
Journal of Applied Physics 97 (1) 013533 (2005)
DOI: 10.1063/1.1828605
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Oxygen precipitate precursors and low temperature gettering processes. I. Segregation of oxygen and thermal donor generation in the 600–850°C range

S Cadeo, S Pizzini, M Acciarri and A Cavallini
Materials Science in Semiconductor Processing 2 (1) 57 (1999)
DOI: 10.1016/S1369-8001(99)00005-0
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Delineation of Crystalline Extended Defects on Multicrystalline Silicon Wafers

Mohamed Fathi
International Journal of Photoenergy 2007 1 (2007)
DOI: 10.1155/2007/18298
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EBIC Investigations of Deformation Induced Defects in Si

Eugene B. Yakimov
Solid State Phenomena 131-133 529 (2007)
DOI: 10.4028/www.scientific.net/SSP.131-133.529
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Recombination Activity of Twin Boundaries in Silicon Ribbons

Eugene B. Yakimov, Olga V. Feklisova and Sergei K. Brantov
Solid State Phenomena 178-179 106 (2011)
DOI: 10.4028/www.scientific.net/SSP.178-179.106
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Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal

Dariusz Chrobak, Michał Trębala, Artur Chrobak and Roman Nowak
Crystals 9 (12) 651 (2019)
DOI: 10.3390/cryst9120651
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