Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme strong>CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

Citations de cet article :

Deformations induced by a Vickers indentor in InP at room temperature

E. Le Bourhis and G. Patriarche
The European Physical Journal Applied Physics 12 (1) 31 (2000)
DOI: 10.1051/epjap:2000168
Voir cet article

Plastic homology of tetrabonded crystals

H.O.K. Kirchner and T. Suzuki
Acta Materialia 46 (1) 305 (1998)
DOI: 10.1016/S1359-6454(97)00150-X
Voir cet article

Plastic deformation of III–V semiconductorsunder concentrated load

E. Le Bourhis and G. Patriarche
Progress in Crystal Growth and Characterization of Materials 47 (1) 1 (2003)
DOI: 10.1016/j.pcrysgrow.2004.09.001
Voir cet article

Electronically induced dislocation glide motion in hexagonal GaN single crystals

Koji Maeda, Kunio Suzuki, Masaki Ichihara, et al.
Physica B: Condensed Matter 273-274 134 (1999)
DOI: 10.1016/S0921-4526(99)00424-X
Voir cet article

Climb of dislocations in GaAs by irradiation

I. Yonenaga, P.D. Brown and C.J. Humphreys
Materials Science and Engineering: A 253 (1-2) 148 (1998)
DOI: 10.1016/S0921-5093(98)00723-0
Voir cet article

Yielding and flow behavior of Mo5Si3 single crystals

K Yoshimi, M.H Yoo, A.A Wereszczak, et al.
Scripta Materialia 45 (11) 1321 (2001)
DOI: 10.1016/S1359-6462(01)01170-8
Voir cet article

Polarity-induced changes in the nanoindentation response of GaAs

E. Le Bourhis, G. Patriarche, L. Largeau and J.P. Rivière
Journal of Materials Research 19 (01) 131 (2004)
DOI: 10.1557/jmr.2004.0015
Voir cet article

Polarity influence on the indentation punching of thin {111} GaAs foils at elevated temperatures

G Patriarche, L Largeau, J P Rivière and E Le Bourhis
Journal of Physics D: Applied Physics 38 (8) 1140 (2005)
DOI: 10.1088/0022-3727/38/8/007
Voir cet article

Applications of Electron Channeling Contrast Imaging for the Rapid Characterization of Extended Defects in III–V/Si Heterostructures

Santino D. Carnevale, Julia I. Deitz, John A. Carlin, et al.
IEEE Journal of Photovoltaics 5 (2) 676 (2015)
DOI: 10.1109/JPHOTOV.2014.2379111
Voir cet article

Brittle-to-ductile transition temperature in InP

Leonardus B. Bayu-Aji and P. Pirouz
physica status solidi (a) 207 (5) 1190 (2010)
DOI: 10.1002/pssa.200925347
Voir cet article

Dislocation dynamics in SiGe alloys

I Yonenaga
Journal of Physics: Conference Series 471 012002 (2013)
DOI: 10.1088/1742-6596/471/1/012002
Voir cet article

High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors

I. Yonenaga, H. Koizumi, Y. Ohno and T. Taishi
Journal of Applied Physics 103 (9) 093502 (2008)
DOI: 10.1063/1.2908193
Voir cet article

Yield strength and dislocation mobility in plastically deformed bulk single-crystal GaN

Ichiro Yonenaga and Kensaku Motoki
Journal of Applied Physics 90 (12) 6539 (2001)
DOI: 10.1063/1.1415754
Voir cet article

Yield strength and dislocation mobility in plastically deformed ZnSe

I. Yonenaga, K. Watanabe, S. Itoh, S. Fujiwara and K. Yoshino
Physica B: Condensed Matter 376-377 771 (2006)
DOI: 10.1016/j.physb.2005.12.193
Voir cet article

Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs

S.-H. Lim, D. Shindo, I. Yonenaga, P. D. Brown and C. J. Humphreys
Physical Review Letters 81 (24) 5350 (1998)
DOI: 10.1103/PhysRevLett.81.5350
Voir cet article

Dynamics and characters of dislocations in ZnSe

I. Yonenaga, K. Watanabe, S. Itoh and S. Fujiwara
Journal of Materials Science 41 (9) 2601 (2006)
DOI: 10.1007/s10853-006-7817-8
Voir cet article

Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy

R. Beresford, C. Lynch and E. Chason
Journal of Crystal Growth 251 (1-4) 106 (2003)
DOI: 10.1016/S0022-0248(02)02376-X
Voir cet article

Structure of annealed nanoindentations in n- and p-doped (001)GaAs

E. Le Bourhis and G. Patriarche
Journal of Applied Physics 106 (12) 123516 (2009)
DOI: 10.1063/1.3270420
Voir cet article

The influence of atomic ordering on strain relaxation during the growth of metamorphic solar cells

A G Norman, R M France, W E McMahon, J F Geisz and M J Romero
Journal of Physics: Conference Series 471 012006 (2013)
DOI: 10.1088/1742-6596/471/1/012006
Voir cet article

Dislocation mobility and photoluminescence of plastically deformed GaN

I. Yonenaga, S. Itoh and T. Goto
Physica B: Condensed Matter 340-342 484 (2003)
DOI: 10.1016/j.physb.2003.09.040
Voir cet article

Thermally Activated Mechanisms in Crystal Plasticity

Pergamon Materials Series, Thermally Activated Mechanisms in Crystal Plasticity 8 227 (2003)
DOI: 10.1016/S1470-1804(03)80037-8
Voir cet article

TEM Study of strain states in III-V semiconductor epitaxial layers.

André ROCHER, Anne PONCHET, Stéphanie BLANC and Chantal FONTAINE
MRS Proceedings 673 P5.5 (2001)
DOI: 10.1557/PROC-673-P5.5
Voir cet article

Electronic states at misfit dislocations in partially relaxed InGaAs/GaAs heterostructures

Ł. Gelczuk, M. Dąbrowska-Szata, G. Jóźwiak and D. Radziewicz
Physica B: Condensed Matter 388 (1-2) 195 (2007)
DOI: 10.1016/j.physb.2006.05.426
Voir cet article

Encyclopedia of Materials: Science and Technology

A. Couret and D. Caillard
Encyclopedia of Materials: Science and Technology 1 (2006)
DOI: 10.1016/B0-08-043152-6/02062-3
Voir cet article

Misfit dislocations in (001) semiconductor heterostructures grown by epitaxy

André Rocher and Etienne Snoeck
Materials Science and Engineering: B 67 (1-2) 62 (1999)
DOI: 10.1016/S0921-5107(99)00210-X
Voir cet article

Modelling of the plastic behaviour of III–V compound semiconductors during compressive tests

R. Lohonka, G. Vanderschaeve and J. Kratochvı́l
Materials Science and Engineering: A 337 (1-2) 50 (2002)
DOI: 10.1016/S0921-5093(02)00038-2
Voir cet article

Plasticity of III—V Compounds at Low Temperatures

T. Suzuki, T. Yasutomi, T. Tokuoka and I. Yonenaga
physica status solidi (a) 171 (1) 47 (1999)
DOI: 10.1002/(SICI)1521-396X(199901)171:1<47::AID-PSSA47>3.0.CO;2-X
Voir cet article

Dislocation multiplication rate in the early stage of germanium plasticity

Jan Fikar, Corinne Dupas, Tomas Kruml, Alain Jacques and Jean-Luc Martin
Materials Science and Engineering: A 400-401 431 (2005)
DOI: 10.1016/j.msea.2005.03.075
Voir cet article

Polarity-induced changes in the nanoindentation response of GaAs

E. Le Bourhis, G. Patriarche, L. Largeau and J.P. Rivière
Journal of Materials Research 19 (01) 131 (2004)
DOI: 10.1557/jmr.2004.19.1.131
Voir cet article

Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE

Ł. Gelczuk, J. Serafińczuk, M. Dąbrowska-Szata and P. Dłużewski
Journal of Crystal Growth 310 (12) 3014 (2008)
DOI: 10.1016/j.jcrysgro.2008.03.003
Voir cet article

The plasticity of indium antimonide: Insights from variable temperature, strain rate jump micro-compression testing

J.M. Wheeler, L. Thilly, A. Morel, et al.
Acta Materialia 106 283 (2016)
DOI: 10.1016/j.actamat.2015.12.036
Voir cet article

Hardness, Yield Strength, and Dislocation Velocity in Elemental and Compound Semiconductors

Ichiro Yonenaga
MATERIALS TRANSACTIONS 46 (9) 1979 (2005)
DOI: 10.2320/matertrans.46.1979
Voir cet article

Strain nonuniformity in GaAs heteroepitaxial films on Si(001) studied by x-ray diffraction

Artem Shalimov, Jadwiga Bąk-Misiuk, Vladimir M. Kaganer, Maria Calamiotou and Alexandros Georgakilas
Journal of Applied Physics 101 (1) 013517 (2007)
DOI: 10.1063/1.2407260
Voir cet article

Mobile dislocation density and strain relaxation rate evolution during InxGa1−xAs∕GaAs heteroepitaxy

C. Lynch, E. Chason and R. Beresford
Journal of Applied Physics 100 (1) 013525 (2006)
DOI: 10.1063/1.2206125
Voir cet article

Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

Santino D. Carnevale, Julia I. Deitz, John A. Carlin, et al.
Applied Physics Letters 104 (23) 232111 (2014)
DOI: 10.1063/1.4883371
Voir cet article

Standing wave effect and fractal structure in dislocation evolution

P. Li and Z. F. Zhang
Scientific Reports 7 (1) (2017)
DOI: 10.1038/s41598-017-04257-9
Voir cet article

DLTS and PR Studies of Partially Relaxed InGaAs/GaAs Heterostructures Grown by MOVPE

Łukasz Gelczuk, Grzegorz Jóźwiak, Marcin Motyka and Maria Dąbrowska-Szata
Solid State Phenomena 131-133 485 (2007)
DOI: 10.4028/www.scientific.net/SSP.131-133.485
Voir cet article

Indentation of Ceramics, Some Highlights

Eric Le Bourhis
Materials Science Forum 662 77 (2010)
DOI: 10.4028/www.scientific.net/MSF.662.77
Voir cet article

Constitutive Relations for Modeling Single Crystal GaN at Elevated Temperatures

Antoinette Maniatty and Payman Karvani
Journal of Engineering Materials and Technology 137 (1) 011002 (2015)
DOI: 10.1115/1.4028441
Voir cet article

High-temperature strength of III V nitride crystals

I Yonenaga
Journal of Physics: Condensed Matter 14 (48) 12947 (2002)
DOI: 10.1088/0953-8984/14/48/336
Voir cet article

Modelling of plastic behaviour of compound semiconductors; from simple glide to multiglide

R Lohonka, G Vanderschaeve and J Kratochv l
Journal of Physics: Condensed Matter 14 (48) 12975 (2002)
DOI: 10.1088/0953-8984/14/48/340
Voir cet article

Reduced Dislocation Introduction in III–V/Si Heterostructures with Glide-Enhancing Compressively Strained Superlattices

Jacob T. Boyer, Ari N. Blumer, Zak H. Blumer, Daniel L. Lepkowski and Tyler J. Grassman
Crystal Growth & Design 20 (10) 6939 (2020)
DOI: 10.1021/acs.cgd.0c00992
Voir cet article

Dislocation‐related electronic states in partially strain‐relaxed InGaAs/GaAs heterostructures grown by MOVPE

Ł. Gelczuk, M. Dąbrowska‐Szata, G. Jóźwiak, D. Radziewicz, J. Serafińczuk and P. Dłużewski
physica status solidi c 4 (8) 3037 (2007)
DOI: 10.1002/pssc.200675467
Voir cet article

Conservative indentation flow throughout thin (011) InP foils

L. Largeau, G. Patriarche, E. Le Bourhis and J. P. Riviere
Journal of Materials Science 40 (14) 3809 (2005)
DOI: 10.1007/s10853-005-2548-9
Voir cet article

Atomic structures and dynamic properties of dislocations in semiconductors: current progress and stagnation

Ichiro Yonenaga
Semiconductor Science and Technology 35 (4) 043001 (2020)
DOI: 10.1088/1361-6641/ab675e
Voir cet article

Jacob T. Boyer, Ari N. Blumer, Zak H. Blumer, Francisco A. Rodriguez, Daniel L. Lepkowski, Steven A. Ringel and Tyler J. Grassman
1680 (2020)
DOI: 10.1109/PVSC45281.2020.9300803
Voir cet article

Tyler J. Grassman, Andrew M. Carlin, Krishna Swaminathan, Chris Ratcliff, Javier Grandal, Limei Yang, Michael J. Mills and Steven A. Ringel
003375 (2011)
DOI: 10.1109/PVSC.2011.6186671
Voir cet article

Andrew M. Carlin, Tyler J. Grassman, Mark R. Brenner, Javier Grandal, Chris Ratcliff, Limei Yang, Michael Mills, Prithu Sharma, Eugene A. Fitzgerald and Steven A. Ringel
000918 (2012)
DOI: 10.1109/PVSC.2012.6317752
Voir cet article

Challenges of relaxed n-type GaP on Si and strategies to enable low threading dislocation density

Ryan D. Hool, Yukun Sun, Brian D. Li, Pankul Dhingra, Rachel W. Tham, Shizhao Fan and Minjoo Larry Lee
Journal of Applied Physics 130 (24) 243104 (2021)
DOI: 10.1063/5.0073525
Voir cet article

Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP

Ludovic Largeau, Gilles Patriarche, Eric Le Bourhis and Jean-Pierre Rivière
International Journal of Materials Research 97 (9) 1230 (2022)
DOI: 10.1515/ijmr-2006-0194
Voir cet article