Journal de Physique III

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High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

A. Accard, F. Brillouet, E. Duda, B. Fernier, G. Gelly, L. Goldstein, D. Leclerc and D. Lesterlin

J. Phys. III France, 2 9 (1992) 1727-1738

DOI: 10.1051/jp3:1992208

A. Accard

F. Brillouet

E. Duda

B. Fernier

G. Gelly

L. Goldstein

D. Leclerc

D. Lesterlin

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Copyright / Publiée par : EDP Sciences