Journal de Physique III

Application du pompage de charge à trois niveaux aux transistors MOS submicroniques

J. L. Autran, B. Balland, C. Plossu, F. Seigneur and L. M. Gaborieau

J. Phys. III France, 3 1 (1993) 33-45

DOI: 10.1051/jp3:1993117

J. L. Autran

B. Balland

C. Plossu

F. Seigneur

L. M. Gaborieau

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