| Numéro |
J. Phys. III France
Volume 3, Numéro 6, June 1993
|
|
|---|---|---|
| Page(s) | 1211 - 1220 | |
| DOI | https://doi.org/10.1051/jp3:1993112 | |
J. Phys. III France 3 (1993) 1211-1220
Study of laser induced photoconductivity in thin films
of amorphous Sb
Ge
Se
alloy
A. S. Maan, L. R. Sharma, H. S. Dahiya and D. R. Goyal Physics Department, Maharshi Dayanand University, Rohtak - 124 001 (Haryana), India
(Received 12 January 1993, revised 17 March 1993, accepted 26 March 1993)
Abstract
Photoconductivity in thin films of amorphous Sb
15Ge
5Se
80,
using a He-Ne Laser is investigated as a function of temperature and intensity.
Temperature dependence of dark and photo current (steady state) reveals that both
processes are activated in nature in the observed temperature range. The variation
of photocurrent with incident excitation is indicative of a power law dependence.
The values of the intensity exponent
suggest the bimolecular recombination
in the present sample. To supplement the above studies, transient photoconductivity
measurements have been made as a function of temperature and intensity. It is
observed that the photocurrent decay in the sample has been exponential in the
entire temperature and intensity range.
© Les Editions de Physique 1993