Journal de Physique III

| Abstract | PDF (51.25 KB) | References |

DOI: 10.1051/jp3:1993113
J. Phys. III France 3 (1993) 1929-1929

Technological state of the art of SiC

Stdphane Tyc

Laboratoire Central de Recllerches, Thomson-CSF, 91404 Orsay Cedex, France

(Received 18 August 1993, accepted 1 September1993)

Abstract
In a recent paper [1], Locatelli and Gamal describe the technological state of the art of SiC compared with Si. I would like to bear witness to the rapid advancement of SiC technology by giving a slighty updated account of SiC technology.

The boule growth of SiC now achieves diameters up to 60 mm. One of the most problematic standing issues is the presence of micropipes in the wafers with a density of the order of 100 cm ^-2 or more [2].

The doping range available in epilayers is now wider. CAFE Research [3] accepts orders for doping densities from 5 $\times$ 10 ¹⁵ cm ^-3 to 1 $\times$ 10 ¹⁹ cm ^-3 in both N and P type. However their state of the art is better (we have received P type with doping 4 $\times$ 10 ¹⁴ cm ^-3 and N type with doping over 2 $\times$ 10 ¹⁹ cm ^-3 and they have also delivered [4] N type doping of 5 $\times$ 10 ¹⁴ cm ^-3). As for large P dopings, Dmitriev has published [5] dopings over 10 ²⁰ cm ^-3

The specific resistance of contacts on N type layers has also rapidly improved. Kelner has published results of 3 $\times$ 10 ^-6 Ohm.cm ² with Ni contacts [6]. We have obtained with molybdenum [7] specific resistances of 2 $\times$ 10 ^-5 Ohm.cm ² on epitaxies doped to 5 $\times$ 10 ¹⁸ cm ^-3 This value should be rapidly lowered as higher doped layers are used.

In sum, I do agree with the authors of [1] that the technology of 6H SiC is rapidly advancing, thanks to breakthroughs in material growth and to a wide ranging renewed interest in this material. The pace may actually be higher than hitherto realized.

References:

[1] Locatelli and Gamal, J. Phys. III France 3 (1993) 1101.

[2] Barret D. L. et al., Tenth Int. Conf. on Crystal Growth, San Diego, CA, USA 16-21 (August 1992).

[3] CREE Research Inc., 2810 Meridian Parkway, Durham, NC 27713, USA.

[4] Parrish M., private communication.

[5] Dmitriev et al., Ext. Abstracts of the Electrochemical Soc. Meeting, 4, 89-2 (1989) 711.

[6] Workshop on SiC Material and Devices (Charlottesville, September 10-11 1992) VA 22901.

[7] Tyc et a1., accepted at the ICSCRM (Washington DC, November 93).