Numéro |
J. Phys. III France
Volume 2, Numéro 9, September 1992
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Page(s) | 1749 - 1755 | |
DOI | https://doi.org/10.1051/jp3:1992210 |
J. Phys. III France 2 (1992) 1749-1755
A study of the room-temperature oxidation of thin Al films by the optical transmission and sheet resistance measurements
G. A. AdegboyegaDepartment of Electronic and Electrical Engineering, Obafemi Awolowo University, Ile-Ife, Nigeria
(Received 27 December 1991, revised 30 March 1992, accepted 19 May 1992)
Abstract
Time-dependent room temperature oxidation of vapour deposited aluminium films has been studied by means of the changes in
the optical transmission and sheet resistance measurements. An increase of both sheet resistance and optical transmittance
with a tendency to saturation has been observed. Our results show that the kinetics of oxidation could be described by a model
whereby an initial logarithmic oxide growth changes to an inverse logarithmic one as time progresses. Our investigation also
shows evidence that freshly prepared "unoxidized" films of Al are more efficient transparent electrode materials than the
oxidized films.
© Les Editions de Physique 1992