The frequency control of laser diodes p. 1557 M. de Labachelerie, C. Latrasse, P. Kemssu and P. Cerez DOI: https://doi.org/10.1051/jp3:1992200 AbstractPDF (2.157 MB)References
Measurements of relative intensity noise (RIN) in semiconductor lasers p. 1591 Irène Joindot DOI: https://doi.org/10.1051/jp3:1992201 AbstractPDF (615.6 KB)References
Semiconductor laser with dispersive loss : Quantum noises and amplitude squeezing p. 1605 Rashit Nabiev, Yuri Popov and Amnon Yariv DOI: https://doi.org/10.1051/jp3:1992100 AbstractPDF (404.4 KB)References
Narrowband frequency control of an injection-locked diode-laser battery p. 1615 J. Yu, M.-C. Gagné, C. Valentin, R.-L. Yuan and P. Pillet DOI: https://doi.org/10.1051/jp3:1992202 AbstractPDF (408.0 KB)References
Stability of an injection-locked DFB 1.5 μm semiconductor laser p. 1623 J.-Ph. Bouyer and Ch. Bréant DOI: https://doi.org/10.1051/jp3:1992203 AbstractPDF (1.087 MB)References
Amplitude modulated external cavity high power laser diode with electric phase stabilization in the far field p. 1645 J. M. Maillard and P. Sansonetti DOI: https://doi.org/10.1051/jp3:1992199 AbstractPDF (1.251 MB)References
Dynamic and noise properties of multi-electrode tunable semiconductor lasers p. 1651 Guang-Hua Duan, Philippe Gallion, Jürgen Holtz and Jean-Claude Bouley DOI: https://doi.org/10.1051/jp3:1992101 AbstractPDF (2.341 MB)References
Picosecond and sub-picosecond pulse generation in semiconductor lasers p. 1673 J.-M. Lourtioz, L. Chusseau and N. Stelmakh DOI: https://doi.org/10.1051/jp3:1992204 AbstractPDF (1.186 MB)References
Nonlinear (self-focusing) limitations of output power in semiconductor lasers of various geometries p. 1691 Peter G. Eliseev and Rashit F. Nabiev DOI: https://doi.org/10.1051/jp3:1992205 AbstractPDF (721.5 KB)References
Study of some pumping schemes for laser diode pumped solid state lasers p. 1703 L. Cabaret and G. Girard DOI: https://doi.org/10.1051/jp3:1992206 AbstractPDF (536.6 KB)References
High power laser diodes p. 1713 G. Volluet, B. Groussin, T. Fillardet, C. Carrière and A. Parent DOI: https://doi.org/10.1051/jp3:1992207 AbstractPDF (1.236 MB)References
High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy p. 1727 A. Accard, F. Brillouet, E. Duda, B. Fernier, G. Gelly, L. Goldstein, D. Leclerc and D. Lesterlin DOI: https://doi.org/10.1051/jp3:1992208 AbstractPDF (1.367 MB)References
Détermination des contraintes résiduelles par diffraction des rayons X dans une couche mince de 1 000 Å de tungstène p. 1741 K. F. Badawi, A. Declémy, A. Naudon and Ph. Goudeau DOI: https://doi.org/10.1051/jp3:1992209 AbstractPDF (384.4 KB)References
A study of the room-temperature oxidation of thin Al films by the optical transmission and sheet resistance measurements p. 1749 G. A. Adegboyega DOI: https://doi.org/10.1051/jp3:1992210 AbstractPDF (1.422 MB)References
Etude par microanalyse ionique de films de poly(paraphénylène) et des phénomènes induits par implantation ionique p. 1757 B. Ratier, M. Gauneau, A. Moliton, G. Froyer, R. Chaplain, C. le Hüe and J. P. Moliton DOI: https://doi.org/10.1051/jp3:1992211 AbstractPDF (2.495 MB)References
A simple system to measure internal friction and creep p. 1779 A. M. Bastawros and M. Z. Said DOI: https://doi.org/10.1051/jp3:1992212 AbstractPDF (404.8 KB)References
Detailed measurements of the flow field in vaneless and vaned diffusers of centrifugal compressors p. 1787 Christian Fradin DOI: https://doi.org/10.1051/jp3:1992213 AbstractPDF (889.4 KB)References
Principe et intérêt du cristal à liaison unique pour les dispositifs piézoélectriques p. 1805 R. Delaite and J. P. Valentin DOI: https://doi.org/10.1051/jp3:1992214 AbstractPDF (390.1 KB)References
Aerodynamically forced response and flutter of structurally mistuned bladed disks in subsonic flow p. 1813 Gregory H. Henderson and Sanford Fleeter DOI: https://doi.org/10.1051/jp3:1992109 AbstractPDF (790.1 KB)References
Automated fringe analysis in diffusivity measurements by sandwich holography p. 1835 Domenica Paoletti, Giuseppe Schirripa Spagnolo, Lucio Laurenti and Antonio Ponticiello DOI: https://doi.org/10.1051/jp3:1992215 AbstractPDF (379.6 KB)References
Free Access Erratum Erratum: Relaxation of high lying excited state of Nd3+ ions in YAG: Nd3+ and in YAP: Nd3+ p. 1843 M. F. Joubert, J. C. Couderc and B. Jacquier DOI: https://doi.org/10.1051/jp3:1992216 AbstractPDF (54.41 KB)
Free Access Erratum Erratum: Experimental determination of nematic director distibution in the vicinity of interface by reflectivity mesurements p. 1843 W. Warenghem, M. Ismaili and D. Hector DOI: https://doi.org/10.1051/jp3:1992262 AbstractPDF (54.41 KB)
