| Numéro |
J. Phys. III France
Volume 2, Numéro 9, September 1992
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|
|---|---|---|
| Page(s) | 1651 - 1671 | |
| DOI | https://doi.org/10.1051/jp3:1992101 | |
J. Phys. III France 2 (1992) 1651-1671
Dynamic and noise properties of multi-electrode tunable semiconductor lasers
Guang-Hua Duan1, Philippe Gallion1, Jürgen Holtz1 and Jean-Claude Bouley21 Département Communications, Ecole Nationale Supérieure des Télécommunications, 46 rue Barraults, 75634 Paris Cedex 13, France
2 Laboratoire de Bagneux, CNET, 196 avenue Henri Ravera, 92220 Bagneux, France
(Received 18 November 1991, accepted 23 January 1992)
Abstract
A general formalism based on the Green's function method is given for multi-electrode semiconductor lasers. The spatial hole
burning effect is taken into account in this formalism. The frequency and intensity modulation properties of multi-electrode
semiconductor lasers can be predicted using this theory. A general linewidth expression is given which includes contributions
from spontaneous emission and carrier shot noise. This method is applied to two-electrode distributed feedback (DFB) and two-electrode
distributed Bragg reflector (DBR) lasers. Experimental results for a two-electrode DBR laser are given and show a good agreement
with the theoretical model. Moreover, the drive current noise of a tunable multi-electrode laser is shown to have an important
influence on the measured lineshape and linewidth.
© Les Editions de Physique 1992