Numéro
J. Phys. III France
Volume 5, Numéro 8, August 1995
Page(s) 1297 - 1305
DOI https://doi.org/10.1051/jp3:1995191
DOI: 10.1051/jp3:1995191
J. Phys. III France 5 (1995) 1297-1305

Antireflection Coating of TiO 2 Study and Deposition by the Screen Printing Method

Y. Boukennous, B. Benyahia, M.R. Charif and A. Chikouche

Photovoltaïc Cells Laboratory, UDTS, 2 Bd Frantz Fanon, B.P. 1017 Alger Gare, Algiers, Algeria

(Received 22 February 1994, revised 22 August 1994, accepted 5 May 1995)

Abstract
We are developing the Screen Printing technique for depositing a single layer quarter wavelength thick antireflection coating of titanium dioxide on silicon substrate. The ink is composed by the titanium ethoxide as the organometallic compound, terpineol as the solvent and the octyphenoxy polyethoxy as the vehicle. It has been applied to 4 inch polished silicon wafers, dried then fired and characterized. The objective of our work was to control the deposition parameters and the ink viscosity to determine their effects on the layer properties. The thicknesses of the TiO 2 films were measured by the stylus technique using a Profilometer. AES, RBS and X-Ray diffraction are used to analyse the layer and to determine its structure and composition according to firing temperatures. The reflection coefficient is measured as a function of the wavelength. As a result, we obtain TiO 2 coating thicknesses between 600 and 800 Å and a minimum reflection near 600nm.



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