| Numéro |
J. Phys. III France
Volume 7, Numéro 7, July 1997
|
|
|---|---|---|
| Page(s) | 1487 - 1493 | |
| DOI | https://doi.org/10.1051/jp3:1997201 | |
DOI: 10.1051/jp3:1997201
J. Phys. III France 7 (1997) 1487-1493
1 INFM Istituto Nazionale di Fisica della Materia, Department of Materials Science, Via Emanueli 15, 20126 Milano, Italy
2 Consorzio Milano Ricerche, Via Cicognara 7, 20133 Milano, Italy
© Les Editions de Physique 1997
J. Phys. III France 7 (1997) 1487-1493
Passivation of Extended Defects in Silicon by Catalytically Dissociated Molecular Hydrogen
S. Binetti1, S. Basu1, M. Acciarri2 and S. Pizzini11 INFM Istituto Nazionale di Fisica della Materia, Department of Materials Science, Via Emanueli 15, 20126 Milano, Italy
2 Consorzio Milano Ricerche, Via Cicognara 7, 20133 Milano, Italy
(Received 3 october 1996, accepted 14 march 1997)
Abstract
This paper reports the results of a new hydrogenation process, which applies the properties of noble metals as chemisorptive
dissociation catalysts for molecular hydrogen. Used to passivate deep states in several kinds of polycrystalline materials,
H has been shown to be particularly effective for samples grown by the EFG (Edge Film Grown) technique. These results are
compared with former ones obtained on dislocated single crystals, which were passivated under an hydrogen plasma, to speculate
about the role of dislocations on the yield of a hydrogen passivation process.
© Les Editions de Physique 1997