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Dislocation and Grain Boundary Energies in Si and Ge from an Anharmonic Bond Charge Model p. 2281 H. Teichler and J. Wilder DOI: https://doi.org/10.1051/jp3:1997259 AbstractPDF (803.1 KB)References
Dislocation-Point Defect Interaction Effect on Local Electrical Properties of Semiconductors p. 2293 E.B. Yakimov DOI: https://doi.org/10.1051/jp3:1997102 AbstractPDF (1016 KB)References
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Microstructure of Pyramidal Defects in InSb Layers Grown by Atomic Layer Molecular Beam Epitaxy on InP Substrates p. 2317 J.C. Ferrer, F. Peiró, A. Cornet, J.R. Morante, T. Utzmeier and F. Briones DOI: https://doi.org/10.1051/jp3:1997261 AbstractPDF (861.4 KB)References
TEM Imaging of Dislocation Kinks, their Motion and Pinning p. 2325 J.C.H. Spence, H.R. Kolar and H. Alexander DOI: https://doi.org/10.1051/jp3:1997262 AbstractPDF (1.204 MB)References
Analysis of Large Impurity Atmospheres at Dislocations and Associated Point Defect Reactions in Differently n-Doped GaAs Crystals p. 2339 C. Frigeri, J.L. Weyher, J. Jiménez and P. Martín DOI: https://doi.org/10.1051/jp3:1997263 AbstractPDF (1.801 MB)References
Thermal Behaviour of Deep Levels at Dislocations in n-Type Silicon p. 2361 D. Cavalcoli, A. Cavallini and E. Gombia DOI: https://doi.org/10.1051/jp3:1997103 AbstractPDF (306.9 KB)References
Mechanical Strength and Dislocation Velocities in GeSi Alloys p. 2367 Ichiro Yonenaga and Koji Sumino DOI: https://doi.org/10.1051/jp3:1997264 AbstractPDF (488.0 KB)References
Strain Measurements in Thin Film Structures by Convergent Beam Electron Diffraction p. 2375 A. Armigliato, R. Balboni, A. Benedetti, S. Frabboni, A. Tixier and J. Vanhellemont DOI: https://doi.org/10.1051/jp3:1997265 AbstractPDF (426.0 KB)References
Influence de l'introduction de défauts colonnaires amorphes sur les propriétés de transport d'un monocristal supraconducteur à haute $T_{\mathsf{c}}$ p. 2385 Franck Warmont, Sylvie Hébert, Vincent Hardy, Christine Martin, Charles Simon and Jackie Provost DOI: https://doi.org/10.1051/jp3:1997266 AbstractPDF (485.7 KB)References
Microstructures and Mechanical Properties of NiAl-(Cr) and TiAl-(Cr) Intermetallic Alloys p. 2393 G. Frommeyer and C. Derder DOI: https://doi.org/10.1051/jp3:1997104 AbstractPDF (751.4 KB)References
Étude théorique de matériaux bianisotropes synthétiques contrôlables p. 2405 Fabrice Auzanneau and Richard W. Ziolkowski DOI: https://doi.org/10.1051/jp3:1997267 AbstractPDF (567.3 KB)References
Méthodes de type éléments finis pour le calcul des champs électriques et magnétiques en électroencéphalographie et magnétoencéphalographie p. 2419 Christophe Guérin, Gildas Marin, Line Garnero and Gérard Meunier DOI: https://doi.org/10.1051/jp3:1997268 AbstractPDF (798.2 KB)References
Filtrage actif des harmoniques en courant et en tension des reseaux électriques : modélisation, simulation numérique et expérimentation p. 2433 C. Lott, O. Lapierre, H. Pouliquen and S. Saadate DOI: https://doi.org/10.1051/jp3:1997269 AbstractPDF (1.015 MB)References
Optical Characterization of the Director Field in a Distorted Nematic Layer p. 2459 Emmanuel Plaut, Alain Joets and Roland Ribotta DOI: https://doi.org/10.1051/jp3:1997105 AbstractPDF (953.3 KB)References
Free Access Erratum Measurement of Atomic Fractions in Multi-Phased Materials of Limited Mass $via$ an Empirical Approach to EXAFS Modeling p. 2475 V.G. Harris, S.A. Oliver, J.D. Ayers and B.N. Das DOI: https://doi.org/10.1051/jp3:1997270 AbstractPDF (252.7 KB)References
