High frequency analysis of fast devices using small-signal Monte Carlo simulations : application to a 0.1 μm-gate MODFET P. Dollfus, S. Galdin, C. Brisset et P. HestoJ. Phys. III France, 3 9 (1993) 1713-1718DOI: https://doi.org/10.1051/jp3:1993231
