| Issue |
J. Phys. III France
Volume 3, Number 10, October 1993
|
|
|---|---|---|
| Page(s) | 1929 - 1929 | |
| DOI | https://doi.org/10.1051/jp3:1993113 | |
DOI: 10.1051/jp3:1993113
J. Phys. III France 3 (1993) 1929-1929
Laboratoire Central de Recllerches, Thomson-CSF, 91404 Orsay Cedex, France
10
15 cm
-3
to 1
10
19 cm
-3 in both N and P type. However their
state of the art is better (we have received P type with doping 4
10
14 cm
-3 and N type with doping over 2
10
19 cm
-3 and they have also delivered [4] N type doping of 5
10
14 cm
-3). As for large P dopings, Dmitriev has
published [5] dopings over 10
20 cm
-3 The specific resistance of contacts on N type layers has also rapidly
improved. Kelner has published results of 3
10
-6
Ohm.cm
2 with Ni contacts [6]. We have obtained with molybdenum [7]
specific resistances of 2
10
-5 Ohm.cm
2 on
epitaxies doped to 5
10
18 cm
-3 This value should be
rapidly lowered as higher doped layers are used. In sum, I do agree with the authors of [1] that the technology of 6H
SiC is rapidly advancing, thanks to breakthroughs in material growth
and to a wide ranging renewed interest in this material. The pace may
actually be higher than hitherto realized. References:[1] Locatelli and Gamal, J. Phys. III France 3 (1993) 1101. [2] Barret
D. L. et al., Tenth Int. Conf. on Crystal Growth, San
Diego, CA, USA 16-21 (August 1992). [3] CREE Research Inc., 2810 Meridian Parkway, Durham, NC 27713, USA. [4] Parrish M.,
private communication. [5] Dmitriev et al., Ext. Abstracts of the Electrochemical Soc.
Meeting, 4, 89-2 (1989) 711. [6] Workshop on SiC Material and Devices (Charlottesville, September
10-11 1992) VA 22901. [7] Tyc et a1., accepted at the ICSCRM (Washington DC, November 93).
© Les Editions de Physique 1993
J. Phys. III France 3 (1993) 1929-1929
Technological state of the art of SiC
Stdphane TycLaboratoire Central de Recllerches, Thomson-CSF, 91404 Orsay Cedex, France
(Received 18 August 1993, accepted 1 September1993)
Abstract
In a recent paper [1], Locatelli and Gamal describe
the technological state of the art of SiC compared with Si. I would
like to bear witness to the rapid advancement of SiC technology by
giving a slighty updated account of SiC technology.
10
15 cm
-3
to 1
10
19 cm
-3 in both N and P type. However their
state of the art is better (we have received P type with doping 4
10
14 cm
-3 and N type with doping over 2
10
19 cm
-3 and they have also delivered [4] N type doping of 5
10
14 cm
-3). As for large P dopings, Dmitriev has
published [5] dopings over 10
20 cm
-3 The specific resistance of contacts on N type layers has also rapidly
improved. Kelner has published results of 3
10
-6
Ohm.cm
2 with Ni contacts [6]. We have obtained with molybdenum [7]
specific resistances of 2
10
-5 Ohm.cm
2 on
epitaxies doped to 5
10
18 cm
-3 This value should be
rapidly lowered as higher doped layers are used. In sum, I do agree with the authors of [1] that the technology of 6H
SiC is rapidly advancing, thanks to breakthroughs in material growth
and to a wide ranging renewed interest in this material. The pace may
actually be higher than hitherto realized. References:[1] Locatelli and Gamal, J. Phys. III France 3 (1993) 1101. [2] Barret
D. L. et al., Tenth Int. Conf. on Crystal Growth, San
Diego, CA, USA 16-21 (August 1992). [3] CREE Research Inc., 2810 Meridian Parkway, Durham, NC 27713, USA. [4] Parrish M.,
private communication. [5] Dmitriev et al., Ext. Abstracts of the Electrochemical Soc.
Meeting, 4, 89-2 (1989) 711. [6] Workshop on SiC Material and Devices (Charlottesville, September
10-11 1992) VA 22901. [7] Tyc et a1., accepted at the ICSCRM (Washington DC, November 93).
© Les Editions de Physique 1993