J. Phys. III France
Volume 5, Number 9, September 1995
Page(s) 1383 - 1389
DOI: 10.1051/jp3:1995198
J. Phys. III France 5 (1995) 1383-1389

Properties of Dislocations in HgCdTe Crystals

P.O. Renault1, J.F. Barbot1, P. Girault2, A. Declemy1, G. Rivaud1 and C. Blanchard1

1  Laboratoire de Métallurgie Physique, URA 131 CNRS, Université de Poitiers, 40 av. du Recteur Pineau, 86022 Poitiers cedex, France
2  LEMMA Université de La Rochelle, Pôle Science et Technologie, av. Marillac, 17042 La Rochelle cedex 1, France

(Received 19 December 1994, revised 21 April 1995, accepted 10 May 1995)

Dislocations in Hg 1-xCd xTe ( $x\approx 0.2$) single crystals have been introduced either by plastic deformation or by Al-implantation at high dose. Structural analysis of implanted samples, using Huang's method shows that dislocation loops are mainly of interstitial type with a radius of about 2.6 nm. Electrical properties of uniaxially deformed samples, using Hall effect, indicate the presence of both acceptor-like type dislocations along with donor-type point defects.

© Les Editions de Physique 1995