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Cited article:

Annealing-related electrical and piezoresistive properties of Band As-implanted LPCVD silicon films

P. Jeanjean, J. Sicart, J. L. Robert, M. Le Berre, P. Pinard, V. Conedera

J. Phys. III France, 3 1 (1993) 47-53

DOI: https://doi.org/10.1051/jp3:1993119

This article has been cited by the following article(s):

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Piezoresistance of boron-doped PECVD and LPCVD polycrystalline silicon films

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Application of Rapid Thermal Annealing on LPCVD Polysilicon Films for Piezoresistivity

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Small angle neutron scattering near Lifshitz lines: Transition from weakly structured mixtures to microemulsions

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Piezoresistive Properties of Boron-Doped PECVD Micro- and Polycrystalline Silicon films

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Electrical and structural properties of rapid thermally annealed boron‐doped silicon films deposited by plasma‐enhanced chemical‐vapor deposition

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