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Cited article:

Étude des pièges dans les transistors à haute mobilité électronique sur GaAs à l'aide de la méthode dite de “relaxation isotherme”. Corrélation avec les anomalies de fonctionnement

P. Audren, J. M. Dumas, M. P. Favennec, S. Mottet

J. Phys. III France, 3 2 (1993) 185-206

DOI: https://doi.org/10.1051/jp3:1993126

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Drain-current DLTS study of an GaAs/InP MESFET

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