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This article has been cited by the following article(s):
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Sub-0.1 μm gate etch processes: Towards some limitations of the plasma technology?
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Electronic structure of a heterostructure of an alkylsiloxane self-assembled monolayer on silicon
Analyses of the chemical topography of silicon dioxide contact holes etched in a high density plasma source
O. Joubert, P. Czuprynski, F. H. Bell, P. Berruyer and R. Blanc Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 15(3) 629 (1997) https://doi.org/10.1116/1.589305
Suppression of Charge Carrier Tunneling through Organic Self-Assembled Monolayers