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Cited article:

Etude de l'effet de la température de dépôt ou de recuit sur la formation de l'interface Au/GaSb(100) par diffraction d'électrons lents et spectroscopies d'électrons Auger ou de pertes d'énergies

M. Rouanet, W. Oueini, M. Nouaoura, N. Bertru, J. Bonnet, L. Lassabatere

J. Phys. III France, 5 5 (1995) 483-493

DOI: https://doi.org/10.1051/jp3:1995141

This article has been cited by the following article(s):

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B. Abidri, M. Ghaffour, A. Abdellaoui, et al.
Applied Surface Science 256 (10) 3007 (2010)
https://doi.org/10.1016/j.apsusc.2009.11.021

Gate metallurgy effects in InAs/AlSb HFETs: Preliminary results and demonstration of surface fermi level shifts

C. R. Bolognesi, M. W. Dvorak and D. H. Chow
Journal of Electronic Materials 27 (8) L54 (1998)
https://doi.org/10.1007/s11664-998-0136-x