Journal de Physique III

Impurities in silicon carbide ceramics and their role during high temperature creep

M. Backhaus-Ricoult, N. Mozdzierz and P. Eveno

J. Phys. III France, 3 12 (1993) 2189-2210

DOI: 10.1051/jp3:1993269

M. Backhaus-Ricoult

N. Mozdzierz

P. Eveno

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