J. Phys. III France
Volume 2, Numéro 12, December 1992
Page(s) 2309 - 2315
DOI: 10.1051/jp3:1992248
J. Phys. III France 2 (1992) 2309-2315

An interdigital gate MOSFET for photodetection

F. Hobar1, S. Laval2, D. Pascal2 and F. Kerrour1

1  Institut d'Electronique, Université de Constantine, Route Ain Bey, Constantine, Algéria
2  Insitut d'Electronique Fondamentale, CNRS URA 022, Université Paris-Sud, 91405 Orsay, France

(Received 4 June 1992, accepted 8 September 1992)

Interdigital gate Si-MOSFET have been fabricated and electrically tested. Their photodetection performances are also evaluated and compared with straight gate ones.

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