J. Phys. III France
Volume 3, Numéro 6, June 1993
Page(s) 1101 - 1110
DOI: 10.1051/jp3:1993186
J. Phys. III France 3 (1993) 1101-1110

Silicon carbide against silicon: a comparison in terms of physical properties, technology and electrical performance of power devices

M. L. Locatelli and S. Gamal

CEGELY, E.C.P.A., URA CNRS n° 829, INSA Lyon, Bât. 401, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France

(Received 9 June 1992, revised 29 January 1993, accepted 5 February 1993)

The aim of the present paper is to give the state of the art of the silicon carbide technology by "photographing" it beside the unique technology used for power electronics that is the silicon one. The theoretical superiority of SiC physical properties on those of Si, together with the important technological advancements realized during the last decade, are the main reasons of the interest given to SiC nowadays. Concerning electrical performance, the voltage and power handling capabilities do not reach today the high expected values, and remain lower than those provided by Si. On the other hand, SiC components confirm the aptitude of this material for high temperature and high frequency applications.

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