J. Phys. III France
Volume 3, Numéro 6, June 1993
Page(s) 1211 - 1220
DOI: 10.1051/jp3:1993112
J. Phys. III France 3 (1993) 1211-1220

Study of laser induced photoconductivity in thin films of amorphous Sb $\mathsf{_{l5}}$Ge $\mathsf{_5}$Se $\mathsf{_{80}}$ alloy

A. S. Maan, L. R. Sharma, H. S. Dahiya and D. R. Goyal

Physics Department, Maharshi Dayanand University, Rohtak - 124 001 (Haryana), India

(Received 12 January 1993, revised 17 March 1993, accepted 26 March 1993)

Photoconductivity in thin films of amorphous Sb 15Ge 5Se 80, using a He-Ne Laser is investigated as a function of temperature and intensity. Temperature dependence of dark and photo current (steady state) reveals that both processes are activated in nature in the observed temperature range. The variation of photocurrent with incident excitation is indicative of a power law dependence. The values of the intensity exponent $\gamma$ suggest the bimolecular recombination in the present sample. To supplement the above studies, transient photoconductivity measurements have been made as a function of temperature and intensity. It is observed that the photocurrent decay in the sample has been exponential in the entire temperature and intensity range.

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