Numéro |
J. Phys. III France
Volume 3, Numéro 8, August 1993
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Page(s) | 1617 - 1623 | |
DOI | https://doi.org/10.1051/jp3:1993224 |
J. Phys. III France 3 (1993) 1617-1623
Barrier layer at metal-ceramic interface in ferroelectric MIM structures
P. Gaucher, J. Hector and J. P. GanneTHOMSON CSF/LCR, Domaine de Corbeville, 91190 Orsay Cedex, France
(Received 23 December 1992, revised 28 April 1993, accepted 3 May 1993)
Abstract
The influence of interfacial contact effects in a ferroelectric Metal-Insulator-Metal (MIM) structure is described. Lead Titano-Zirconate
(PZT) material is deposited by a sol-gel technique on a platinum bottom electrode. Top electrodes are deposited after PZT
annealing. The ferroelectric properties of the PZT (related to the hysteresis curve) are strongly dependent on the thermal
treatments of both electrodes. Preannealing of the bottom electrode before PZT deposition, as well as post annealing of the
top electrodes, lead to an improvement of the properties (increase in remanent polarization and in dielectric constant). This
is explained by the suppression of the contact barrier at the interfaces between PZT and metal. The switching of the domains
in the subsaturated regime of the hysteresis can be modelled by introducing a non ferroelectric barrier at the interfaces
when the electrodes are not annealed.
© Les Editions de Physique 1993