J. Phys. III France
Volume 3, Numéro 9, September 1993
Page(s) 1739 - 1749
DOI: 10.1051/jp3:1993234
J. Phys. III France 3 (1993) 1739-1749

Low frequency noise of a 980 nm InGaAs/GaAs strained quantum well laser

B. Orsal, J. M. Peransin, P. Signoret and K. Daulasim

Centre d'Electronique de Montpellier, CEM (CNRS URA 391), Université Montpellier II, Sciences et Techniques du Languedoc, 34 095 Montpellier Cedex, France

(Received 10 November 1992, revised 1 April 1993, accepted 8 April 1993)

The longitudinal mode hopping and the related terminal electrical noise in InGaAs/GaAs ridge single quantum well (SQW) lasers are investigated. It is found that electrical mode hopping has a Lorentzian dependence. The correlation with the optical noise is experimentally shown in the low-medium frequency range. Measurements of this electrical-optical correlation give a high value of this parameter ( $0.8 2 \leq \gamma^2 \leq 0.9$) when the longitudinal mode hopping is present.

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