| Numéro |
J. Phys. III France
Volume 3, Numéro 9, September 1993
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|
|---|---|---|
| Page(s) | 1739 - 1749 | |
| DOI | https://doi.org/10.1051/jp3:1993234 | |
DOI: 10.1051/jp3:1993234
J. Phys. III France 3 (1993) 1739-1749
Centre d'Electronique de Montpellier, CEM (CNRS URA 391), Université Montpellier II, Sciences et Techniques du Languedoc, 34 095 Montpellier Cedex, France
© Les Editions de Physique 1993
J. Phys. III France 3 (1993) 1739-1749
Low frequency noise of a 980 nm InGaAs/GaAs strained quantum well laser
B. Orsal, J. M. Peransin, P. Signoret and K. DaulasimCentre d'Electronique de Montpellier, CEM (CNRS URA 391), Université Montpellier II, Sciences et Techniques du Languedoc, 34 095 Montpellier Cedex, France
(Received 10 November 1992, revised 1 April 1993, accepted 8 April 1993)
Abstract
The longitudinal mode hopping and the related terminal electrical noise
in InGaAs/GaAs ridge single quantum well (SQW) lasers are investigated.
It is found that electrical mode hopping has a Lorentzian dependence.
The correlation with the optical noise is experimentally shown in the
low-medium frequency range. Measurements of this electrical-optical
correlation give a high value of this parameter (
)
when the longitudinal mode hopping is present.
© Les Editions de Physique 1993