J. Phys. III France
Volume 4, Numéro 2, February 1994
Page(s) 331 - 338
DOI: 10.1051/jp3:1994133
J. Phys. III France 4 (1994) 331-338

A study of thermal crystallization in $\mathsf{Se_{70}Te_{30-x}Sb_x}$ glassy alloys

S. K. Agrahari, R. Arora and A. Kumar

Department of Physics, Harcourt Butler Technological Institute, Kanpur, 208002, India

(Received 2 February 1993, revised 25 October 1993, accepted 3 November 1993)

The time dependence of dc conductivity for different compositions of the amorphous semiconducting system Se 70Te 30-xSb x $(0 \leqslant x \leqslant 10)$ has been studied at various temperatures in the range 70-100 °C. An attempt is made to fit the experimental data to the crystallization theory of Avrami, giving the activation energy of crystallization and the order parameter. An increase in the activation energy of crystallization upto 4 at% of Sb is attributed to an increased disorder. However, at higher concentration of Sb, an ordered structure may be established due to the formation of micro-crystalline phases, as observed in X-ray diffraction patterns, which may result in the decrease of activation energy after 4 at% of Sb.

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