InGaAs/InP multiple quantum well modulators in experiment and theory

(Received 8 February 1994, accepted 2 May 1994)

Abstract
The optoelectronic properties of InGaAs/InP quantum well modulators are investigated experimentally, including transport and recombination processes. The applied experimental techniques are differential electro-transmission, photocurrent and electric field modulated photoluminescence. In our theoretical treatment we consider the electric field dependence of the confined state energies and of the overlap of electron-hole wavefunctions. From these the dielectric function of the multiple quantum well material is reconstructed. Comparison between experiment and theory reveals the importance of specific material related aspects. Among them, non intentional background doping and interface degradation are identified as major sources of discrepancy between theory and experiment.