J. Phys. III France
Volume 5, Numéro 9, September 1995
Page(s) 1307 - 1326
DOI: 10.1051/jp3:1995192
J. Phys. III France 5 (1995) 1307-1326

Trap and Dislocation Electrical Activity in a Reversely Biased P-N Junction in Silicon

Bernard Leroy

IBM France dept 1825/31H, 224 Bd. Kennedy 91105 Corbeil Essonnes, France

(Received 19 December 1994, revised 19 April 1995, accepted 22 May 1995)

In a reverse biased junction, trap activity is only due to carrier emission, stimulated by the local electric field function of the trap location and of the applied reverse voltage  $V_{\rm r}$, through Poole-Frenkel and Fowler-Nordheim mechanisms. This article investigates how the exponent and the activation energy of the current function of  $V_{\rm r}$ give a relation between the trap energy level  $E_{\rm t}$ and its location  W0. If W0 varies, $E_{\rm t}$ can be directly determined (Acceptor at $E_{\rm i} + 0.04$ eV in one example). Two examples of defect location, one dislocation and one interstitial cluster, are presented.

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