Trap and Dislocation Electrical Activity in a Reversely Biased P-N Junction in Silicon

(Received 19 December 1994, revised 19 April 1995, accepted 22 May 1995)

Abstract
In a reverse biased junction, trap activity is only due to carrier emission, stimulated by the local electric field function of the trap location and of the applied reverse voltage  , through Poole-Frenkel and Fowler-Nordheim mechanisms. This article investigates how the exponent and the activation energy of the current function of  give a relation between the trap energy level  and its location  W₀. If W₀ varies,  can be directly determined (Acceptor at  eV in one example). Two examples of defect location, one dislocation and one interstitial cluster, are presented.