J. Phys. III France
Volume 6, Numéro 5, May 1996
Page(s) 613 - 623
DOI: 10.1051/jp3:1996144
J. Phys. III France 6 (1996) 613-623

Microstructural Characterization of Ion Implanted Polycrystalline Alumina

A. Rahioui1, C. Esnouf T. Girardeau1, 2 and A. Benyagoub3

1  Groupe de Métallurgie Physique et de Physique de Matériaux (GEMPPM), UMR 5510, Bâtiment 502 - INSA, 69621 Villeurbanne Cedex, France
2  Laboratoire de Métallurgie Physique (LMP), URA CNRS 131, SP2MI, BP 179, 86960 Futuroscope Cedex, France
3  Institut de Physique Nucléaire de Lyon (IPN), UMR 6422, 69622 Villeurbanne Cedex, France

(Received 28 June 1995, revised 12 January 1996, accepted 24 January 1996)

The microstructural changes induced in polycrystalline $\alpha$-alumina by high dose ion implantation were studied by Transmission Electron Microscopy (TEM) and X-ray Absorption Near-Edge Structure (XANES). Several regions were observed in the specimens prepared by the cross-sectional method. We found that the implanted layer consists of a strongly damaged crystallographic structure, which tends to be destabilized in a cubic structure, where the atomic sites are very strained. The layer beyond the distribution of implanted ions is characterized by a high density of defects. A mechanism explaining the formation of this defective layer is proposed.

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