| Numéro |
J. Phys. III France
Volume 6, Numéro 6, June 1996
|
|
|---|---|---|
| Page(s) | 797 - 805 | |
| DOI | https://doi.org/10.1051/jp3:1996155 | |
J. Phys. III France 6 (1996) 797-805
Investigation of the Effect of Discharge Plasma Stabilization by a Semiconductor
N.N. Lebedeva, V.I. Orbukh and B.G. SalamovBaku State University, Baku 370148, Azerbaijan
(Received 19 June 1995, accepted 14 March 1996)
Abstract
The present paper deals with the urgent problem of the gas discharge plasma contact with a semiconducting electrode. The phenomenon
of gas discharge stabilization by a semiconducting electrode has been investigated in metal-thin (
m) gas gap-high ohmic semiconductor structure. Gallium arsenide (
107 - 108 ohm cm) has been used as the semiconductor. It has been found that the deposition of a metallic film on particular regions
of a semiconductor surface leads to current filamentation on the corresponding regions. This fact confirms the conclusion
that the stabilization effect is determined by boundary conditions on a plasma-semiconductor contact.
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