J. Phys. III France
Volume 6, Numéro 6, June 1996
Page(s) 797 - 805
DOI: 10.1051/jp3:1996155
J. Phys. III France 6 (1996) 797-805

Investigation of the Effect of Discharge Plasma Stabilization by a Semiconductor

N.N. Lebedeva, V.I. Orbukh and B.G. Salamov

Baku State University, Baku 370148, Azerbaijan

(Received 19 June 1995, accepted 14 March 1996)

The present paper deals with the urgent problem of the gas discharge plasma contact with a semiconducting electrode. The phenomenon of gas discharge stabilization by a semiconducting electrode has been investigated in metal-thin ( $10 - 100~\mu$m) gas gap-high ohmic semiconductor structure. Gallium arsenide ( 107 - 108 ohm cm) has been used as the semiconductor. It has been found that the deposition of a metallic film on particular regions of a semiconductor surface leads to current filamentation on the corresponding regions. This fact confirms the conclusion that the stabilization effect is determined by boundary conditions on a plasma-semiconductor contact.

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