J. Phys. III France
Volume 6, Numéro 9, September 1996
Page(s) 1167 - 1180
DOI: 10.1051/jp3:1996176
J. Phys. III France 6 (1996) 1167-1180

Ground State and Excited State H-Atom Temperatures in a Microwave Plasma Diamond Deposition Reactor

A. Gicquel1, M. Chenevier2, Y. Breton1, M. Petiau1, J.P. Booth2 and K. Hassouni1

1  Laboratoire d'Ingéniérie des Matériaux et des Hautes Pressions, CNRS-UPR 1311, Université Paris-Nord, avenue J.B. Clément, 93430 Villetaneuse, France
2  Laboratoire de Spectrométrie Physique, CNRS-URM C5588, Université Joseph Fourier de Grenoble, B.P. 87, 38402 Saint Martin d'Hères Cedex, France

(Received 22 February 1996, revised 14 June 1996, accepted 24 June 1996)

Ground electronic state and excited state H-atom temperatures are measured in a microwave plasma diamond deposition reactor as a function of a low percentage of methane introduced in the feed gas and the averaged input microwave power density. Ground state H-atom temperatures ( $T_{\rm H}$) and temperature of the H-atom in the n=3 excited state $(T_{{\rm H}\alpha})$ are obtained from the measurements respectively of the excitation profile by Two-photon Allowed transition Laser Induced Fluorescence (TALIF) and the H $\alpha$ line broadening by Optical Emission Spectroscopy (OES). They are compared to gas temperatures calculated with a 1D diffusive non equilibrium H 2 plasma flow model and to ground electronic state rotational temperatures of molecular hydrogen measured previously by Coherent Anti-Stokes Raman Spectroscopy.

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