Numéro |
J. Phys. III France
Volume 6, Numéro 11, November 1996
|
|
---|---|---|
Page(s) | 1507 - 1526 | |
DOI | https://doi.org/10.1051/jp3:1996199 |
DOI: 10.1051/jp3:1996199
J. Phys. III France 6 (1996) 1507-1526
Laboratoire de Microélectronique, IXL, Université Bordeaux I, 351 cours de La Libération, 33405 Talence Cedex, France
© Les Editions de Physique 1996
J. Phys. III France 6 (1996) 1507-1526
Photoresist Development Model for Linewidth Control in the Fabrication of MCM and Customised ASICs
E. Saint-Christophe, H. Fremont, M. Fathi and Y. DantoLaboratoire de Microélectronique, IXL, Université Bordeaux I, 351 cours de La Libération, 33405 Talence Cedex, France
(Received 21 December 1995, revised 12 April 1996, accepted 6 August 1996)
Abstract
The authors present an analytical approach of the line width control in photoresist sensitized using a laser beam lithography
bench. They take into consideration parameters of the photoresist such as the Dill parameters, the absorbance and the reflection
factor as well as parameters of the etching process such as the speed and the intensity of the laser beam. They give a large
study of the time and spatial dependence of the absorbance during the passage of the laser beam spot on the photoresist surface
and present experimental results in accordance with their theoretical approach.
© Les Editions de Physique 1996