Photoresist Development Model for Linewidth Control in the Fabrication of MCM and Customised ASICs

(Received 21 December 1995, revised 12 April 1996, accepted 6 August 1996)

Abstract
The authors present an analytical approach of the line width control in photoresist sensitized using a laser beam lithography bench. They take into consideration parameters of the photoresist such as the Dill parameters, the absorbance and the reflection factor as well as parameters of the etching process such as the speed and the intensity of the laser beam. They give a large study of the time and spatial dependence of the absorbance during the passage of the laser beam spot on the photoresist surface and present experimental results in accordance with their theoretical approach.