J. Phys. III France
Volume 7, Numéro 2, February 1997
Page(s) 337 - 349
DOI: 10.1051/jp3:1997126
J. Phys. III France 7 (1997) 337-349

Fluorescence Detection of Extended X-Ray Absorption Fine Structure in Thin Films

R. Castañer and C. Prieto

Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco, 28049 Madrid, Spain

(Received 5 June 1996, revised 27 September 1996, accepted 28 October 1996)

The linearity of the fluorescence detection of the Extended X-ray Absorption Fine Structure (EXAFS) signal of moderately thin film samples depends on the experiment geometry and on the sample thickness because of the self-absorption effect. The correction for thick samples has been extensively studied but there has not been reported a method which could be useable continuously for intermediate thickness. We propose an approximative method that, taking into account the sample thickness, will provide the correction of the EXAFS signal amplitude. In the present work, the correction is applied to two different systems: FeSi 2 thin films and Co/Cu superlattices. After correction, the determination of the crystallographic phase of FeSi 2 thin films over different sustrates has been carried out.

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