J. Phys. III France
Volume 7, Numéro 7, July 1997
Page(s) 1425 - 1433
DOI: 10.1051/jp3:1997197
J. Phys. III France 7 (1997) 1425-1433

Non-Destructive Techniques for Identification and Control of Processing Induced Extended Defects in Silicon and Correlation with Device Yield

J. Vanhellemont1, S. Milita2, M. Servidori2, V. Higgs3, G. Kissinger4, E. Gramenova1, E. Simoen1 and P. Jansen1

1  IMEC, Kapeldreef 75, 3001 Leuven, Belgium
2  CNR-Istituto LAMEL, Via Gobetti 101, 40129 Bologna, Italy
3  Bio-Rad Micromeasurements Ltd, Maylands Avenue, Hemel Hempstead HP2 7TD, United Kingdom
4  Institute for Semiconductor Physics, Walter-Korsing-Str. 2, 15230 Frankfurt (Oder), Germany

(Received 3 October 1996, revised 17 January 1997, accepted 9 April 1997)

The possibilities and limitations of non-destructive extended defect characterization techniques, i.e. X-ray topography, carrier recombination imaging and laser scattering tomography are illustrated by a case study whereby a dislocation problem occurred during the local isolation step of a CMOS compatible diode process. It is shown that the diode yield is correlated with the presence of dislocations observed after the full process. The "in process" application of the techniques is illustrated by investigating defect formation after different local isolation processes.

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