J. Phys. III France
Volume 7, Numéro 7, July 1997
Page(s) 1435 - 1450
DOI: 10.1051/jp3:1997198
J. Phys. III France 7 (1997) 1435-1450

Mechanical Properties and Dislocation Dynamics in III-V Compounds

I. Yonenaga

Institute for Materials Research, Tohoku University, Sendai 980-77, Japan

(Received 3 October 1996, revised 1 April 1997, accepted 9 April 1997)

The dynamic activities of dislocations and the mechanical properties of various III-V compound semiconductors with a sphalerite structure are reviewed, including current results. Macroscopic stress-strain characteristics and yield strength are described quantitatively in terms of dislocation dynamics on the basis of knowledge of the dynamic behaviour of individual dislocations in these compounds. Various impurities in the compounds affect the mechanical strength through two kinds of effects on individual dislocations: one is the modification of dislocation mobility in glide motion and the other is the immobilization of dislocations. The velocities of rate controlling dislocations during deformation are deduced from analysis of the dynamic state of dislocations.

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