| Numéro |
J. Phys. III France
Volume 7, Numéro 7, July 1997
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|
|---|---|---|
| Page(s) | 1451 - 1467 | |
| DOI | https://doi.org/10.1051/jp3:1997199 | |
DOI: 10.1051/jp3:1997199
J. Phys. III France 7 (1997) 1451-1467
1 Department of Applied Physics, Faculty of Engineering, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan
2 Institute for Solid State Physics, The University of Tokyo, Roppongi, Minato-ku, Tokyo 106, Japan
© Les Editions de Physique 1997
J. Phys. III France 7 (1997) 1451-1467
High Resolution Electron Microscopic Studies of the Atomistic Glide Processes in Semiconductors
K. Maeda1, M. Inoue1, K. Suzuki2, H. Amasuga1, M. Nakamura1 and E. Kanematsu11 Department of Applied Physics, Faculty of Engineering, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan
2 Institute for Solid State Physics, The University of Tokyo, Roppongi, Minato-ku, Tokyo 106, Japan
(Received 3 October 1996, revised 14 February 1997, accepted 17 March 1997)
Abstract
Direct observations of kinks and their motion on 30°-partial dislocations in Ge and GaAs have been for the first time attempted
by using high resolution electron microscopy with the electron beam incident normal to the stacking fault plane separating
the two partials. Lattice fringe shift across the 30°-partials was used to locate the partial dislocation lines in an atomic
resolution sufficient to identify kinks on them. Possible causes of kink migration and kink-pair formation observed in the
images were discussed in light of available experimental and theoretical information.
© Les Editions de Physique 1997