J. Phys. III France
Volume 1, Numéro 9, September 1991
Page(s) 1503 - 1508
DOI: 10.1051/jp3:1991207
J. Phys. III France 1 (1991) 1503-1508

On the intrinsic gettering of Cu in p-type silicon

G. A. Adegboyega1 and A. poggi2

1  Department of Electronic and Electrical Engineering, Obafemi Awolowo University, Ile-Ife, Nigeria
2  Istituto CNR-LAMEL, Via Castagnoli 1, 40126 Bologna, Italy

(Received 20 November 1990, revised 17 May 1991, accepted 27 May 1991)

The ability of high temperature oxygen precipitate to act as a gettering sink for copper impurities in p-type silicon substrates has been investigated by the use of resistivity, lifetime and infrared absorption spectroscopy measurements. Copper proved to be a donor impurity in Si and showed a low level of reaction with the oxygen precipitate. This level of reaction, which resulted in the emission of a small amount of interstitial oxygen, appears to be responsible for the poor ability of the high temperature oxygen precipitate to act as an efficient gettering sink for this impurity.

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