| Issue |
J. Phys. III France
Volume 1, Number 9, September 1991
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|
|---|---|---|
| Page(s) | 1503 - 1508 | |
| DOI | https://doi.org/10.1051/jp3:1991207 | |
DOI: 10.1051/jp3:1991207
J. Phys. III France 1 (1991) 1503-1508
1 Department of Electronic and Electrical Engineering, Obafemi Awolowo University, Ile-Ife, Nigeria
2 Istituto CNR-LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
© Les Editions de Physique 1991
J. Phys. III France 1 (1991) 1503-1508
On the intrinsic gettering of Cu in p-type silicon
G. A. Adegboyega1 and A. poggi21 Department of Electronic and Electrical Engineering, Obafemi Awolowo University, Ile-Ife, Nigeria
2 Istituto CNR-LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
(Received 20 November 1990, revised 17 May 1991, accepted 27 May 1991)
Abstract
The ability of high temperature oxygen precipitate to act as a gettering sink for copper impurities in p-type silicon substrates
has been investigated by the use of resistivity, lifetime and infrared absorption spectroscopy measurements. Copper proved
to be a donor impurity in Si and showed a low level of reaction with the oxygen precipitate. This level of reaction, which
resulted in the emission of a small amount of interstitial oxygen, appears to be responsible for the poor ability of the high
temperature oxygen precipitate to act as an efficient gettering sink for this impurity.
© Les Editions de Physique 1991