| Numéro |
J. Phys. III France
Volume 3, Numéro 5, May 1993
|
|
|---|---|---|
| Page(s) | 1033 - 1049 | |
| DOI | https://doi.org/10.1051/jp3:1993180 | |
DOI: 10.1051/jp3:1993180
J. Phys. III France 3 (1993) 1033-1049
1 Electronstandart, 196143, St. Petersburg, Russia
2 A. F. Ioffe Physical Technical Institute, 194021, St. Petersburg, Russia
© Les Editions de Physique 1993
J. Phys. III France 3 (1993) 1033-1049
Characterization of stress in semiconductor wafers using birefringence measurements
E. M. Gamarts1, P. A. Dobromyslov1, V. A. Krylov1, S. V. Prisenko1, E. A. Jakushenko1 and V. I. Safarov21 Electronstandart, 196143, St. Petersburg, Russia
2 A. F. Ioffe Physical Technical Institute, 194021, St. Petersburg, Russia
(Received 17 September 1992, accepted 19 February 1993)
Abstract
The nondestructive optical method for quality control based on measurement
of birefringence in semiconductor wafers is described. The influence of crystallographic
orientation and multiple reflections in wafers on measured parameters are discussed.
Also the full description of the device used for investigation of commercial
semiconductor wafers is given. The last part of the article is devoted to the
results of experimental investigations of semiconductor wafers during manufacturing
of semiconductor devices and IC.
© Les Editions de Physique 1993