J. Phys. III France
Volume 3, Numéro 5, May 1993
Page(s) 1033 - 1049
DOI: 10.1051/jp3:1993180
J. Phys. III France 3 (1993) 1033-1049

Characterization of stress in semiconductor wafers using birefringence measurements

E. M. Gamarts1, P. A. Dobromyslov1, V. A. Krylov1, S. V. Prisenko1, E. A. Jakushenko1 and V. I. Safarov2

1  Electronstandart, 196143, St. Petersburg, Russia
2  A. F. Ioffe Physical Technical Institute, 194021, St. Petersburg, Russia

(Received 17 September 1992, accepted 19 February 1993)

The nondestructive optical method for quality control based on measurement of birefringence in semiconductor wafers is described. The influence of crystallographic orientation and multiple reflections in wafers on measured parameters are discussed. Also the full description of the device used for investigation of commercial semiconductor wafers is given. The last part of the article is devoted to the results of experimental investigations of semiconductor wafers during manufacturing of semiconductor devices and IC.

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