Numéro |
J. Phys. III France
Volume 4, Numéro 9, September 1994
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Page(s) | 1533 - 1542 | |
DOI | https://doi.org/10.1051/jp3:1994220 |
J. Phys. III France 4 (1994) 1533-1542
Thin layer diffraction
Paul F. FewsterPhilips Research Laboratories, Cross Oak Lane, Redhill, U.K.
(Received 19 November 1993, accepted 11 February 1994)
Abstract
Many of the challenges in X-ray diffraction arise from the requirement to produce detailed information on very thin layers.
This paper illustrates the present limits in the analysis of X-ray diffraction profiles with examples of epitaxial and polycrystalline
layers. One of the primary uses of X-ray diffraction of epitaxial layers is in the determination of composition and thickness,
but this can be fraught with problems for the unwary yet a very powerful technique when the correct procedures are used. Often
the assumptions concerning epitaxial quality are rather ambitious and this paper will consider the influence of imperfect
epitaxy on the subsequent interpretation. The latter part of this paper will discuss the limits in polycrystalline diffraction
analysis for the study of nano-structures and the initial stages of the recrystallisation of amorphous Si.
© Les Editions de Physique 1994