J. Phys. III France 4 (1994) 1851-1864
Theoretical approach to interfacial metal-oxide bondingClaudine Noguera1 and Gilles Bordier2
1 Laboratoire de Physique des Solides, associé au CNRS, Université Paris Sud, 91405 Orsay, France
2 Centre d'Etudes Nucléaires de Saclay, DPE/SPEA, 91191 Gif-sur-Yvette Cedex, France
(Received 28 February 1994, accepted 20 June 1994)
This paper reviews existing theoretical calculations of the electronic characteristics and of the adhesion energy at a metal-oxide interface, in the context of non reactive adhesion processes and two- or three-dimensional metal growth processes. Emphasis is put on the competition between metal-cation and metal-oxygen interfacial interactions, on the resulting charge transfers and on the Ferrni level position. Aside from the well-known image force and van der Waals contributions to the adhesion energy, the importance of kinetic and electrostatic terms associated with the Metal Induced Gap States and the interfacial dipole is stressed.
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