Numéro |
J. Phys. III France
Volume 4, Numéro 10, October 1994
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Page(s) | 1851 - 1864 | |
DOI | https://doi.org/10.1051/jp3:1994104 |
J. Phys. III France 4 (1994) 1851-1864
Theoretical approach to interfacial metal-oxide bonding
Claudine Noguera1 and Gilles Bordier21 Laboratoire de Physique des Solides, associé au CNRS, Université Paris Sud, 91405 Orsay, France
2 Centre d'Etudes Nucléaires de Saclay, DPE/SPEA, 91191 Gif-sur-Yvette Cedex, France
(Received 28 February 1994, accepted 20 June 1994)
Abstract
This paper reviews existing theoretical calculations of the electronic characteristics and of the adhesion energy at a metal-oxide
interface, in the context of non reactive adhesion processes and two- or three-dimensional metal growth processes. Emphasis
is put on the competition between metal-cation and metal-oxygen interfacial interactions, on the resulting charge transfers
and on the Ferrni level position. Aside from the well-known image force and van der Waals contributions to the adhesion energy,
the importance of kinetic and electrostatic terms associated with the Metal Induced Gap States and the interfacial dipole
is stressed.
© Les Editions de Physique 1994