Peculiarities of Bi ₄Ti ₃O ₁₂ films grown by DC magnetron sputtering

(Received 20 September 1993, revised 21 July 1994, accepted 13 September 1994)

Abstract
The peculiarities of the synthesis and crystallization of complex oxides (B ₄Ti ₃O ₁₂ as an example) from the decay products in magnetron sputtering are discussed. The processes of complex oxide sputtering by ion bombardment, transfer of the products through the plasma to the substrate, the surface processes on the substrate and oxidation-reduction processes are considered. The dynamics of the layer formation is investigated by measuring the spectral line intensities (  nm and  nm) of the sputtered atoms at the target surface. The film deposition mechanism is shown to change with distance between substrate and target. A critical distance of  nm is found. At atoms are deposited, while at molecules condense. The degree of crystallization depends on oxygen pressure. Thermal activation strongly affects the deposition rate. In the case of molecular deposition at temperatures of C the high-temperature phase of -Bi ₂O ₃ forms along with Bi ₂O ₃ and TiO ₂. The dielectric loss tangent of Bi ₄Ti ₃O ₁₂ films depends on the bias potential of the substrate.