Numéro |
J. Phys. III France
Volume 7, Numéro 11, November 1997
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Page(s) | 2159 - 2164 | |
DOI | https://doi.org/10.1051/jp3:1997248 |
J. Phys. III France 7 (1997) 2159-2164
Modes of Hydrogen Incorporation in Hydrogenated Amorphous Carbon (a-C:H), Modifications with Annealing Temperature
Y. Bounouh1, K. Zellama1, A. Zeinert1, M. Benlahsen1, M. Clin1 and M.L. Thèye21 Laboratoire de Physique de la Matière Condensée, Faculté des Sciences d'Amiens, 33 rue Saint-Leu, 80039 Amiens Cedex, France
2 Laboratoire d'Optique des Solides UA 781 (CNRS), Case 80, Université Pierre et Marie Curie, 4 place Jussieu, 75252 Paris Cedex 05, France
(Received 4 February 1997, revised 30 June 1997, accepted 11 August 1997)
Abstract
In order to obtain more information about the nature of the hydrogen bonding and the thermal stability of a-C:H films, we
have studied two different types of films labeled I and II deposited in a d.c. multipolar plasma system from pure methane
at substrate bias equal to
-40 and
-600 V respectively. A combination of several complementary techniques has been carried out on the samples in their as-deposited
state as well as after isochronal annealing cycles at increasing temperatures up to 650
C. The results clearly indicate that the two types of samples have very different H bonding and microstructure in their as-deposited
state. They also behave differently upon annealing and still exhibit quite different microstructures and H bonding configurations
up to high annealing temperature.
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