J. Phys. III France
Volume 7, Numéro 11, November 1997
Page(s) 2159 - 2164
DOI: 10.1051/jp3:1997248
J. Phys. III France 7 (1997) 2159-2164

Modes of Hydrogen Incorporation in Hydrogenated Amorphous Carbon (a-C:H), Modifications with Annealing Temperature

Y. Bounouh1, K. Zellama1, A. Zeinert1, M. Benlahsen1, M. Clin1 and M.L. Thèye2

1  Laboratoire de Physique de la Matière Condensée, Faculté des Sciences d'Amiens, 33 rue Saint-Leu, 80039 Amiens Cedex, France
2  Laboratoire d'Optique des Solides UA 781 (CNRS), Case 80, Université Pierre et Marie Curie, 4 place Jussieu, 75252 Paris Cedex 05, France

(Received 4 February 1997, revised 30 June 1997, accepted 11 August 1997)

In order to obtain more information about the nature of the hydrogen bonding and the thermal stability of a-C:H films, we have studied two different types of films labeled I and II deposited in a d.c. multipolar plasma system from pure methane at substrate bias equal to -40 and -600 V respectively. A combination of several complementary techniques has been carried out on the samples in their as-deposited state as well as after isochronal annealing cycles at increasing temperatures up to 650  $^{\circ}$C. The results clearly indicate that the two types of samples have very different H bonding and microstructure in their as-deposited state. They also behave differently upon annealing and still exhibit quite different microstructures and H bonding configurations up to high annealing temperature.

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