J. Phys. III France
Volume 2, Numéro 8, August 1992
Page(s) 1391 - 1398
DOI: 10.1051/jp3:1992184
J. Phys. III France 2 (1992) 1391-1398

Plasma depostion of BN, BCN:H and Me-BCN:H films using N-trimethylborazine (Me = Ti, Nb)

A. Weber1, U. Bringmann1, C.P. Klages1, K. Taube1, G. Döllein1, H. Meyer2 and G. Weidenbach2

1  Fraunhofer-Institut für Schicht- und Oberfläschentechnik, Vogt-Kölln-Strasse 30, 2000 Hamburg 54, Germany
2  SOLVAY Deutschland, Hans-Böckler-Allee 20, 3000 Hannover 1, Germany

(Received 1st February, accepted 15 April 1992)

N-Trimethylborazine has been used as precursor to deposit BN, BCN:H and metal-containing BCN:H films by means of plasma CVD processes. Depending on the plasma process and the gas mixture, films with various element compositions and mechanical properties were obtained.

Carbon-free BN coatings formed at substrate temperatures of about 600°C in an ECR plasma CVD process, if ammonia was fed through the resonance zone. With Ar, on the other hand, colourless hard BCN:H coatings were obtained at comparably low temperatures of 100 to 150°C.

Brownish BCN:H plasma polymer films were deposited from rf glow discharges using N-trimethylborazine/Ar mixtures. The formation of metal-containing BCN:H films with refractory metal carbide or nitride clusters in a BCN-network was achieved by a combination of rf sputtering from Ti or Nb targets and plasma CVD from the precursor/Ar mixture.

Results of EPMA, IR, nanometer indentation, XPS and X-ray diffraction measurements are reported.

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