J. Phys. III France
Volume 2, Numéro 9, September 1992
Page(s) 1615 - 1622
DOI: 10.1051/jp3:1992202
J. Phys. III France 2 (1992) 1615-1622

Narrowband frequency control of an injection-locked diode-laser battery

J. Yu, M.-C. Gagné, C. Valentin, R.-L. Yuan and P. Pillet

Laboratoire Aimé Cotton, C.N.R.S. II, Bâtiment 505, Campus d'Orsay, 91405 Orsay Cedex, France

(Received 23 January 1992, accepted 30 March 1992)

We report the generalization of the optical injection locking procedure to a battery of high power diode lasers. To illustrate the principle, two 50 mW cw single-mode GaAlAs multiple quantum well structure diode lasers have been injection-locked to a low power cw single-mode diode laser. In the presence of a large number of slave lasers, the isolation of the master one becomes more critical, but the injection conditions are not changed dramatically. A typical locking bandwidth of 3 GHz is obtained for an injection power of 20  $\mu$W. Significant locking is still observed for 0.5  $\mu$W injection. Injection-locked high power laser beams can be obtained with RF range frequency offsets by injection through acousto-optical modulators, offering a large number of potential applications.

© Les Editions de Physique 1992